| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 738177 | Sensors and Actuators A: Physical | 2007 | 5 Pages |
Abstract
We report the fabrication of ZnO photoconductive sensors epitaxially grown on sapphire substrates with interdigitated Ni/Au electrodes. It was found that there exists an electric field-dependent photoconductive gain in the fabricated sensors. With an applied electric field of 500 V/cm, it was found that maximum quantum efficiency was around 2.8% while time constant of the decay transient was τ ∼ 0.556 ms.
Related Topics
Physical Sciences and Engineering
Chemistry
Electrochemistry
Authors
S.P. Chang, S.J. Chang, Y.Z. Chiou, C.Y. Lu, T.K. Lin, Y.C. Lin, C.F. Kuo, H.M. Chang,