Effect of high drain voltage on stress sensitivity in nMOSFETs

The effect of mechanical stress on the MOSFET performance under various biasing conditions is presented here. Study on the stress sensitivity suggests an increased sensitivity at higher drain voltages. Higher stress sensitivity obtained at higher drain voltage is due to impact ionization. Stress sensitivity shows a good linearity with the applied stress at higher operating voltages. Optimum gate voltage and drain voltage exists for maximum sensitivity. The results are promising for their application in high sensitivity smart stress sensors for varieties of applications.