CMOS magnetic sensor integrated circuit with sectorial MAGFET

In this paper, a CMOS magnetic sensor integrated circuit (IC) for a perpendicular magnetic field is introduced. The sensor integrated circuit is designed and fabricated in a 0.6 μm digital CMOS process. It consists of a pair of common-source split-drain magnetic field-effect transistor (MAGFET), a pre-processing circuit with a switches array, a correlated double sampling (CDS) circuit and a digital controlling part. The measurements of perpendicular magnetic field as well as the noise shaping are realized on-chip by the two functioning modes of the sensor integrated circuit.The MAGFET is sectorial with a radius of 48 μm and an angle of 90°, and the measured sensitivity SA (current-related sensitivity) is 3.61%/T. At the working frequency of 10 kHz, the sensitivity of the magnetic sensor is 2.62 V/T.