| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 738944 | Sensors and Actuators A: Physical | 2007 | 5 Pages |
Abstract
The radiative lifetime of as-prepared and modified layers of porous silicon (por-Si) were studied in liquid solutions with different pH. It was observed that por-Si photoluminescence (PL) intensity and decay lifetime strongly depend on pH value. This phenomenon is explained by competition of the following processes: UV-induced hydrogen effusion, hydrogen adsorption from the buffer solution, and por-Si oxidation. Regarding the phenomenon a pH change sensor can be proposed. Por-Si layer degradation can be decreased somehow by protective PEDOT layer.
Related Topics
Physical Sciences and Engineering
Chemistry
Electrochemistry
Authors
A. Benilov, I. Gavrilchenko, I. Benilova, V. Skryshevsky, M. Cabrera,