Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
738969 | Sensors and Actuators A: Physical | 2007 | 5 Pages |
Abstract
The microstructure, electrical resistivity and piezoresistive property of magnetron sputtered indium tin oxide (ITO) films were investigated as functions of preparation and post-annealing conditions. Annealing at 400 °C for 30 min resulted in low electrical resistivity ≤6.0 × 10−3 Ω cm and observable piezoresistive coefficient ranging from −4.3 × 10−11 to −7.1 × 10−11 Pa−1. Prototypes of pressure sensors with an annealed ITO film deposited on a 25 μm thick silicon diaphragm were fabricated. With a bias voltage of 1 V, the device gave a voltage response of 12.6 mV when the differential pressure across the diaphragm varied from −6 × 104 to 6 × 104 Pa.
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Authors
Kai Wah Yeung, Chung Wo Ong,