| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 738972 | Sensors and Actuators A: Physical | 2007 | 5 Pages |
Abstract
In this paper we examine with analytical and finite element modeling the influence of structural parameters on the performance of capacitive silicon pressure sensors. It is found that device behavior is dependant on the substrate deformation as well as the foundation of the sensor diaphragm. Accurate results may only be obtained when all parameters and residual stresses are included.
Related Topics
Physical Sciences and Engineering
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Electrochemistry
Authors
V. Tsouti, G. Bikakis, S. Chatzandroulis, D. Goustouridis, P. Normand, D. Tsoukalas,