Investigation of Q-switched InP-based 1550 nm semiconductor lasers

High energy picosecond pulse generation from a two contact tapered 5 quantum well (QW) InGaAlAs/InP diode laser (1550 nm) is investigated using a passive Q-switching technique. Single peak pulses with pulse energies as high as 500 pJ and durations of typically hundreds of picoseconds are obtained from the device by applying reverse bias voltages in the range of 0 V to −18 V to the absorber section of the device. It is also demonstrated that more symmetrical Q-switched pulses are obtained by reducing the duration of electrical pulses applied to the gain section of the laser. Such an improvement is attributed to the reduced time of the population inversion in the gain section due to shorter electrical pulse. We also show comparatively the dependence of optical spectra on the reverse bias voltage for diode lasers emitting at 1550 nm and 1350 nm, and demonstrate that better spectral output is obtained from AlGaInAs lasers emitting at a wavelength of 1550 nm.

► We fabricate two section tapered 1550 nm Q-switched diode lasers. ► We produce Q-switched pulses with pulse energies as high as 500 pJ. ► Reduction in the duration of electrical pulses leads to more symmetrical Q-switched pulses. ► InGaAlAs diode lasers (1550 nm) show better performance than InGaAsP (1350 nm) lasers.