| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 739665 | Sensors and Actuators A: Physical | 2013 | 5 Pages |
Abstract
In this study, we examined the resistive switching characteristics of the TiO2 nanorod film based resistance random access memory (RRAM). TiO2 nanorod film is grown on FTO substrate by simple hydrothermal process. The grown TiO2 film is characterized using SEM, XRD, EDAX and FTIR for its morphological, structural and compositional studies. XRD result confirms the anatase phase of TiO2. The analysis of I–V results reveals that the switching property of our device originates from the oxidation/reduction reaction occurred at the interface of Ti/TiO2. The device exhibited high ON/OFF ratio (>104), long retention and good endurance performance at RT.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Electrochemistry
Authors
V. Senthilkumar, A. Kathalingam, V. Kannan, Karuppanan Senthil, Jin-Koo Rhee,