| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 739928 | Optics & Laser Technology | 2006 | 5 Pages |
The physical mechanism of two-photon response was studied in this paper by measuring characteristics of the two-photon response of the Si metal–semiconductor–metal (MSM) structure sample. The two-photon response includes two-photon absorption (TPA) and doubled-frequency absorption (DFA). An experiment was designed to measure the photocurrent dependence on incident light power, the dependence of the photoelectric signal on the applied voltage and the relationship between the photoelectric current and the light-spot position. The experimental fact that two-photon response of the silicon sample is relative to the applied electric field shows that DFA is the main physical mechanism of two-photon response and establishes the foundation for fabricating high-sensitivity two-photon response Si photodetector.
