| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 740386 | Sensors and Actuators A: Physical | 2007 | 8 Pages |
Abstract
Thin films of CdS, Bi2S3 and composite CdS–Bi2S3 have been deposited using modified chemical bath deposition (M-CBD) technique. The various preparative parameters were optimized to obtain good quality thin films. The as-deposited films of CdS, Bi2S3 and composite were annealed in Ar gas at 573 K for 1 h. A comparative study was made for as-deposited and annealed CdS, Bi2S3 and composite thin films. Annealing showed no change in crystal structure of these as-deposited films. However, an enhancement in grain size was observed by AFM studies. In addition change in band gap with annealing was seen. A study of spectral response, photosensitivity showed that the films can be used as a photosensor.
Related Topics
Physical Sciences and Engineering
Chemistry
Electrochemistry
Authors
R.R. Ahire, N.G. Deshpande, Y.G. Gudage, A.A. Sagade, S.D. Chavhan, D.M. Phase, Ramphal Sharma,