| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 740581 | Sensors and Actuators A: Physical | 2006 | 9 Pages |
Abstract
SiO2 and Si3N4 as well as other insulators are used in MEMS. However, their tendency for electrostatic charging diminishes the device reliability. The charging effect becomes significant when these devices are subjected to ionizing radiation. The irradiation induced charging depends on the nature of irradiation, the vicinal metal layers, and the metal–insulator interface properties. The sensitivity of RF MEMS to electromagnetic radiation is presented, taking into account the simulation of charge generation to device's structure with different insulating layer composition and thickness.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Electrochemistry
Authors
Vasilios George Theonas, Michael Exarchos, George J. Papaioannou, George Konstantinidis,