| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 746091 | Optics and Lasers in Engineering | 2009 | 4 Pages |
Abstract
Selective illumination of a silicon wafer can be used for the construction of non-permanent inductive grids. A numerical model is used for the calculation of plasma density distribution in silicon as a function of time. Some indicative results on the microwave properties of the device are presented.
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Authors
A.A. Kontogeorgos, D.P. Korfiatis, K.A.Th. Thoma, J.C. Vardaxoglou,