Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
746467 | Solid-State Electronics | 2015 | 9 Pages |
Abstract
In this paper we develop several extensions to semi-classical modeling of low-field mobility, which are necessary to treat planar and non-planar channel geometries on equal footing. We advance the state-of-the-art by generalizing the Prange-Nee model for surface roughness scattering to non-planar geometries, providing a fully numerical treatment of Coulomb scattering, and formulating the Kubo-Greenwood mobility model in a consistent, dimension-independent manner. These extensions allow meaningful comparison of planar and non-planar structures alike, and open the door to evaluating emerging device concepts, such as the FinFET or the junction-less transistor, on physical grounds.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Zlatan Stanojević, Oskar Baumgartner, Lidija Filipović, Hans Kosina, Markus Karner, Christian Kernstock, Philipp Prause,