Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
746564 | Solid-State Electronics | 2014 | 5 Pages |
•A novel T-Shaped Source/Drain Extension (T-SSDE) Gate Underlap Gate All Around (GAA) MOSFET is proposed.•It drastically reduces source/drain resistance in Gate Underlap GAA MOSFET.•T-SSDE, enhances drive current of Gate Underlap GAA MOSFET.•T-SSDE Gate Underlap GAA MOSFET increases immunity to SCEs.•Increases carrier transport efficiency in channel with high cut-off frequency (fT).
In the proposed work, a novel T-Shaped Source/Drain Extension (T-SSDE) Gate Underlap Gate All Around (GAA) MOSFET is presented and its performance is compared with that of corresponding Conventional Gate Underlap GAA MOSFET using ATLAS-3D device simulator. A quantitative study of main figure of merits (FOMs) for T-SSDE Underlap GAA has been carried out at different Gate Underlap lengths. It is shown that in T-SSDE, short channel effects (SCEs) are suppressed due to enhanced carrier transport efficiency. The results show an improvement in drain current, Ion/Ioff ratio, transconductance, high unity-gain frequency fT and superior analog/RF performance as compared to conventional Gate Underlap GAA MOSFET, thus, making it a better substitute of conventional Underlap Gate GAA devices for faster switching and low power applications.