Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
746807 | Solid-State Electronics | 2014 | 4 Pages |
Abstract
•Pseudo-Boltzmann approximation to calculate the electron concentration.•A model for the drain current of highly doped junction-less transistors.•A new approximation to Fermi-Dirac statistics to model junction-less devices.
Calculation of the carrier concentrations in semiconductors using the Fermi-Dirac integral requires complex numerical calculations; in this context, practically all analytical device models are based on Boltzmann statistics, even though it is known that it leads to an over-estimation of carriers densities for high doping concentrations. In this paper, a new approximation to Fermi-Dirac integral, called Pseudo-Boltzmann model, is presented for modeling junctionless transistors with high doping concentrations.
Keywords
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
F. Avila-Herrera, A. Cerdeira, J.B. Roldan, P. Sánchez-Moreno, I.M. Tienda-Luna, B. Iñiguez,