Radio-frequency and low noise characteristics of SOI technology on plastic for flexible electronics

In this work, we report on the HF performance and noise characteristics of 65 nm SOI-CMOS technology transferred onto plastic films. After transfer-bonding onto a thin flexible substrate, RF-SOI-MOSFETs are shown to feature high unity-current-gain cutoff and maximum oscillation frequencies fT/fMAX amounting to 150/160 GHz for n-type and 100/130 GHz for p-type, respectively. Minimal noise figure and associated gain NFmin/Gass of 0.57 dB/17.8 dB and 0.57 dB/17.0 dB are measured at 10 GHz for n- and p-MOSFETs, respectively.

► We propose a method to fabricate high performance flexible electronics from mature SOI-CMOS technology. ► The method relies on removal of the initial rigid substrate and transfer-bonding onto a flexible foil. ► Record static, high frequency, and noise performance is demonstrated on both n- and p-MOSFETs. ► Invariant RF properties pave the way to more complex RF integrated functions on flexible foil.