| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 746897 | Solid-State Electronics | 2013 | 5 Pages |
Abstract
⺠Off-state leakage current for nMuGFETs was degraded by radiation due to the increase of the back gate leakage current. ⺠The proton irradiation influence on the off-state leakage current is investigated for four different stress conditions. ⺠For pMuGFETs the radiation has no influence on the gate current and consequently did not show any influence in off-state current. ⺠nMuGFETs with high stress effectiveness reach unacceptable values of off-state leakage current after radiation.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Paula Ghedini Der Agopian, Caio Cesar Mendes Bordallo, Eddy Simoen, Cor Claeys, João Antonio Martino,