Time dependent dielectric breakdown (TDDB) characteristics of metal–oxide–semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics

The high κ gate dielectrics of MOS capacitors with HfZrLaO (standing for HfO2 doped with La and Zr) or HfLaO (standing for HfO2 doped with La) have been fabricated by atomic-layer-deposition (ALD), and the time-dependent-dielectric-breakdown (TDDB) reliability properties have also been investigated. The equivalent oxide thickness (EOT) of HfLaO or HfZrLaO is 0.72 nm or 0.68 nm, respectively. In terms of the gate leakage current density (Jg) versus EOT (Jg-EOT) performance, HfZrLaO has a better characteristic in comparison with HfLaO. In terms of TDDB characteristics, the maximum voltages projected to have 10-year TDDB lifetime under 85 °C operation for HfZrLaO and HfLaO ultra-thin gate dielectrics are 1.87 V and 2.03 V, respectively. In addition, some important results, such as activation energy and field acceleration parameter, for HfLaO and HfZrLaO gate dielectrics are compared and summarized in this research.

► Two high-κ gate dielectrics, HfLaO and HfZrLaO, of MOS were fabricated. ► Their electrical properties and TDDB characteristics were studied and compared. ► La incorporation into HfO2 could significantly improve the Jg-EOT performance. ► Additional Zr incorporation further improved the Jg-EOT with satisfactory TDDB.