| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 746955 | Solid-State Electronics | 2012 | 6 Pages |
Resistive switching properties of a memory device in an IrOx/TaOx/WOx/W structure have been investigated. High-resolution transmission electron microscopy image has shown the formation of a bilayer structure of TaOx/WOx which is further confirmed by energy dispersive X-ray spectroscopy and X-ray photo-electron spectroscopy analyses. The underlying switching mechanism is successfully explained by providing various electrical measurements such as device area dependency on set/reset voltage and low resistance state. A model based on oxygen ions migration is then proposed. Cumulative probability plots of essential memory parameters such as set/reset voltage and LRS/HRS show good distribution. The device has shown excellent read endurance of >105 times and data retention of >104 s with a resistance ratio of >102 at 85 °C.
► Resistive switching properties and mechanism of IrOx/TaOx/WOx/W stack are studied. ► HRTEM, EDX and XPS analyses revealed TaOx/WOx bilayer formation. ► Oxygen ions/vacancy migration under the electric field result resistance switching. ► Set/reset voltage and LRS independency on device area prove filamentary conduction. ► Good endurance and data retention are achieved.
