Article ID Journal Published Year Pages File Type
746957 Solid-State Electronics 2012 5 Pages PDF
Abstract

We demonstrate carbon nanotube intermolecular p–n junctions and study the electron transport mechanisms. Thermionic emission is the main transport mechanisms under forward bias while tunneling dominates the electron transport of the reverse bias condition. A kink point appearing on the plot of ln(I/V2) versus 1/V indicates that the transport mechanism experiences a transition from direct tunneling to the Fowler–Nordheim tunneling under the reverse bias condition. In contrast, the Arrhenius plot of the I–V curve at forward biases suggests that tunneling is more important than the thermionic emission below 50 K.

► We demonstrate a single-walled carbon nanotube based intermolecular p–n junction. ► The junction consists of a cross of SWCNT channels of p- and n-type CNTFETs. ► At a small forward bias, thermionic emission is the dominant transport mechanism. ► At a large forward bias or reverse bias, tunneling is more important. ► Transport mechanism at RB experiences a transition from direct to F–N tunneling.

Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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