A unified analytical and scalable lumped model of RF CMOS spiral inductors based on electromagnetic effects and circuit analysis

An enhanced scalable compact model for on-chip RF CMOS spiral inductors is presented. By considering layout and technology parameters, under quasi-static approximation, the model elements are all expressed analytically and based on electromagnetic effects. Frequency dependent behavior of CMOS spiral such as skin and proximity effects, and decrease of equivalent series resistance due to substrate coupling is considered. The model is suitable to be easily implemented in design kits by foundry and provides interesting accuracy to be used by CMOS Radio Frequency Integrated Circuits designers.

► In this study, a compact scalable model of CMOS spiral inductors is proposed. ► The model parameters equations are expressed using simple analytical expressions. ► On chip CMOS spiral frequency dependent characteristics are modeled. ► Substrate coupling, skin and proximity effects are considered in the model. ► The model is suitable for RFIC designers and is easy to implement in design kits.