Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
747031 | Solid-State Electronics | 2011 | 7 Pages |
This paper presents the DC parameter extraction of the equivalent circuit model in an InP-InGaAsSb double heterojunction bipolar transistor (HBT). The non-ideal collector current is modeled by a non-ideal doping distribution in the base region. Then several consequent non-ideal effects, which have always been neglected in typical HBTs, are studied using Medici device simulator. Moreover, the associated DC parameters of VBIC model are extracted accordingly. The equivalent circuit model is in good agreement with the measured data in IC–VCE characteristics.
Research highlights► This paper presents the DC parameter extraction in an InP–InGaAsSb double HBT. ► Non-ideal collector current is modeled by a non-ideal base doping distribution. ► Several consequent non-ideal effects are studied using Medici device simulator. ► The associated DC parameters of VBIC model are extracted accordingly.