Article ID Journal Published Year Pages File Type
747040 Solid-State Electronics 2011 5 Pages PDF
Abstract
► I-V characteristics of the AlCdO/unpolished (polished) p-type Si diodes were examined. ► The higher barrier height of the AlCdO/p-type Si diode was found. ► The lower series resistance of the AlCdO/p-type Si diode was found. ► The surface roughness plays an essential role in improving the device performance.
Keywords
Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
Preview
Current-voltage characteristics of AlCdO Schottky contact on the polished and unpolished p-type Si surfaces with and without light illumination
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