| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 747189 | Solid-State Electronics | 2010 | 4 Pages |
Abstract
Tunnel injection transit-time diodes (TUNNETT) were fabricated with molecular layer epitaxy (MLE) and a 390 × 440 μm patch antenna was coupled with the GaAs TUNNETT diode for cavity-less sub-terahertz (THz) oscillators. The obtained sub-terahertz continuous wave (CW) was 177–197 GHz with a detected power of −35.3 dBm at 197 GHz under a bias current of 550 mA.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Sundararajan Balasekaran, Kazuomi Endo, Tadao Tanabe, Yutaka Oyama,