| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 747190 | Solid-State Electronics | 2010 | 4 Pages |
Abstract
Vertical aligned p-Si nanowires were fabricated by electroless wet chemical etching of Si wafer. p-Si nanowires/ZnO thin film heterojunction diode was fabricated by depositing ZnO thin film on vertically aligned p-Si nanowire arrays. Optical studies revealed that the Si nanowire surface has porous silicon like structure. The junction properties were evaluated by measuring I–V and C–V characteristics. I–V characteristics exhibited well defined rectifying behavior with a turn-on voltage of 2.26 V and ideality factor of 4.5.
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Authors
Ji-Hyuk Choi, Sachindra Nath Das, Kyeong-Ju Moon, Jyoti Prakash Kar, Jae-Min Myoung,