Comparisons of hot-carrier degradation behavior in SOI-LIGBT and SOI-LDMOS with different stress conditions

The hot-carrier degradation behavior of the lateral insulated gate bipolar transistor on SOI substrate (SOI-LIGBT) and the lateral DMOS transistor on SOI substrate (SOI-LDMOS) with the same structure fully except for the doping type in drain area on different stress conditions is experimentally compared for the first time. For high Vgs and low Vds, the degradation in SOI-LIGBT is much more serious than the SOI-LDMOS, which can be reflected by more positive Vth shift. For low Vgs and high Vds, there is also much severer hot-carrier degradation at the early stress stage in SOI-LIGBT according to the decrease level of Ron. Experimental results have been verified by 2D TCAD numerical simulations.