Magnetoconcentration effect of a bipolar magnetotransistor formed in a diffusion well

The experimentally discovered effect of the negative sensitivity of a double-collector bipolar magnetotransistor of n-p-n type, of which the base is a diffusion well, is related to the appearance of the volume magnetoconcentration effect at the well-substrate p-n junction. This new effect was investigated with the help of device simulation programs, and it was established that the sensitivity sign of the magnetic field is determined by the distribution of flows of electrons and holes at the well-substrate p-n junction. Furthermore, an analysis of the volume charge modulation of the p-n junction by the magnetic field was conducted.