Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
747207 | Solid-State Electronics | 2010 | 5 Pages |
Abstract
Robust memory cell cylinder capacitor with cross double patterning technology (cross DPT) was successfully developed for the first time. Cross DPT was introduced to overcome overlay problems of conventional DPT. During second patterning reticle is rotated by 90° therefore pattern to pattern overlay in cross DPT is not as critical as in conventional DPT. Memory cell cylinder capacitor with cross DPT showed more rectangular shape without any physical failure and capacitance of cell capacitor with cross DPT is improved up to â¼8% compared to capacitance of cell capacitor with single exposure technique (SET).
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Seong-Goo Kim, Cheon Bae Kim,