Article ID Journal Published Year Pages File Type
747211 Solid-State Electronics 2010 4 Pages PDF
Abstract

The environment dependence and electric properties of Ni/methyl-red/Ni organic device were both theoretically and experimentally investigated at room temperature. This volatile memory consists of methyl-red layer (∼200 nm) with a planar geometry. The results demonstrated that (a) applying low-voltage pulses increases conductivity from 10−6 S cm−1 (OFF) to 10−5 S cm−1 (ON); (b) measurements of current–voltage show a peak-to-valley ratio of 8:1 [10:1] under positive [negative] bias; (c) the electric feature of this dye memory is due the Schottky barrier in the metal/methyl-red interface with negative differential resistance effect. These semiconductor characteristics indicate that this azo aromatic compound is promising for applications in volatile memory arrays.

Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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