Explicit quantum potential and charge model for double-gate MOSFETs

In this paper, we present a compact quantum model for both the electrostatic potential and electric charge in thin-film symmetric double-gate metal–oxide-semiconductor field-effect transistors with undoped body. As a novelty, both the resulting potential and charge have explicit expressions on bias and geometrical parameters. A comparison has been made between self-consistent numerical solutions of Schrödinger–Poisson equations and our model results with close agreement. Finally, the range of validity of the presented model is discussed.