Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
747434 | Solid-State Electronics | 2009 | 5 Pages |
Abstract
The high-frequency capabilities of p-i-n and n-i-n doped-contact carbon nanotube field-effect transistors (CNFETs) are compared via simulations using a self-consistent, energy-dependent effective-mass Schrödinger-Poisson solver. Band-to-band tunneling, which is a characteristic feature of p-i-n CNFETs, can also occur in n-i-n CNFETs, and it is shown here that it reduces the unity-current-gain frequency fT in the latter devices. Generally, however, fT is higher in n-i-n CNFETs. For both types of device, fT increases with the chiral index of zig-zag tubes, but for different reasons.
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Authors
D.L. Pulfrey, Li Chen,