FDSOI devices with thin BOX and ground plane integration for 32 nm node and below

In this paper we compare Fully-Depleted SOI (FDSOI) devices with different BOX (Buried Oxide) thicknesses with or without ground plane (GP). With a simple high-k/metal gate structure, the 32 nm devices exhibits Ion/Ioff performances well suited for low power (LP) applications. The different BOX thicknesses and ground plane conditions are compared with bulk 45 nm technology in terms of variability and noise. A 0.499 μm2 SRAM cell has been characterized with less than 50 pA of standby current/cell and a SNM of 210 mV @ Vdd 1 V.