Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
747468 | Solid-State Electronics | 2009 | 7 Pages |
Abstract
This paper investigates the origins of sub-threshold slope degradation in vertical MOSFETs (v-MOSFETs) due to dry etching of the polysilicon surround gate. Control v-MOSFETs exhibit a degradation of sub-threshold slope as the channel length is reduced from 250 to 100Â nm, with 100Â nm transistors having a value of 125Â mV/dec and a DIBL of 210Â mV/V. The effect of the polysilicon gate etch is investigated using a frame-gate architecture in which the polysilicon gate overlaps the side of the pillar, thereby protecting the channel from etch damage. This device shows no degradation of short channel effects when the channel length is scaled and exhibits a near-ideal sub-threshold slope of 76Â mV/dec and a DIBL of 33Â mV/V at a channel length of 100Â nm. Gated diode measurements unambiguously demonstrate that this improved sub-threshold slope is due to the elimination of etch damage at the top and bottom of the pillar created during polysilicon gate etch. An alternative method of eliminating dry etch damage is then investigated by optimizing the Fillet Local Oxidation (FILOX). These devices give a sub-threshold slope of 81Â mV/dec and a DIBL of 25Â mV/V at a channel length of 100Â nm. The improved immunity to dry etch damage is due to the creation of a thick protective oxide at the top and bottom of the pillar during the FILOX process.
Keywords
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
M.M.A. Hakim, L. Tan, O. Buiu, W. Redman-White, S. Hall, P. Ashburn,