| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 747492 | Solid-State Electronics | 2007 | 7 Pages |
Abstract
A novel power PiN diode model is derived based on the generalised all-injection level minority carrier drift–diffusion theory. An equivalent lossy transmission lines describing the carriers transport trough arbitrarily doped emitter and base quasi-neutral regions are defined. The extended electro-thermal diode model including temperature dependences of carrier transport parameters is also described and implemented in circuit simulator PSPICE. By tuning a small set of model parameters, an excellent agreement of modelling results with numerical simulations of realistic power PiN diode is obtained for different switching conditions and temperatures.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Nebojsa Jankovic, Tatjana Pesic, Petar Igic,