Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
747497 | Solid-State Electronics | 2007 | 5 Pages |
Abstract
In this study, metal–semiconductor–metal (MSM) photoconductive detector was fabricated on c-axis preferred oriented ZnO film prepared on quartz by radio frequency magnetron sputtering. With the applied bias below 3 V, the dark current was below 250 nA. The typical responsivity peaked at around 360 nm, and had values of 30 A/W. In addition, the UV (360 nm) to visible (450 nm) rejection ratio of around five orders could be extracted from the spectra response. Furthermore, the transient response measurement revealed fast photoresponse with a rise time of 20 ns.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
K.W. Liu, J.G. Ma, J.Y. Zhang, Y.M. Lu, D.Y. Jiang, B.H. Li, D.X. Zhao, Z.Z. Zhang, B. Yao, D.Z. Shen,