Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
747503 | Solid-State Electronics | 2007 | 4 Pages |
Abstract
Wet-etching-induced surface patterning of p-type indium tin oxide (ITO) electrodes has been investigated to improve the light output of GaN-based light-emitting diodes (LEDs). Etching of as-deposited ITO layers in a buffered-oxide-etch solution results in the formation of a high density of randomly distributed sphere-shaped protrusions (250–1100 nm in size). LEDs fabricated with the 7 s-etched ITO electrodes yield higher light output (by 31.7% at 20 mA) compared with LEDs made with unpatterned ITO electrodes. The improvement is attributed to the increased light escape probability via the randomly distributed sphere-shaped protrusions formed on the electrode surfaces.
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Engineering
Electrical and Electronic Engineering
Authors
Dong-Seok Leem, Takhee Lee, Tae-Yeon Seong,