| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 747505 | Solid-State Electronics | 2007 | 4 Pages |
Abstract
A continuous and analytic channel potential solution for undoped (lightly doped) surrounding-gate (SRG) MOSFETs is presented in this article. It is based on the exact solution of Poisson’s equation, allowing the surface potential to be adequately described from the sub-threshold to strong inversion region. It is demonstrated that the analytic channel potential characteristics agree with the Newton–Raphson iterative solutions for all ranges of gate and quasi-Fermi-potential.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Jin He, Yadong Tao, Feng Liu, Jie Feng, Shengqi Yang,