Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
747510 | Solid-State Electronics | 2006 | 4 Pages |
Abstract
A methodology for the extraction of a bipolar transistor collector resistance from its output characteristics using the Forced-Beta Method has been demonstrated. The presented extraction methodology eliminates the need for additional measurements in the evaluation of collector resistances and allows reuse of the existing standard output characteristics data. The method is particularly suitable for compact modeling and technology characterization from high-frequency transistor test structures with no separate substrate contacts.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Hsien-Chang Wu, Slobodan Mijalković, Joachim N. Burghartz,