Gate current modeling of high-k stack nanoscale MOSFETs

A unified approach, particularly suitable for evaluation of high-k stack structures, is presented. This approach is based on fully self-consistent solutions to the Schrödinger and Poisson equations. Various structures and materials of high-k stacks of interest have been examined and compared to access the reduction of gate current in these structures. The present approach is capable of modeling high-k stack structures consisting of multiple layers of different dielectrics. The results of gate current and capacitance obtained from our model are in very good agreement with experimental data.