Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
747526 | Solid-State Electronics | 2006 | 4 Pages |
Abstract
The dark forward and reverse current–voltage characteristics of a typical BPW34 silicon photodiode have been investigated in the temperature range 80–300 K. We propose that tunnelling enhanced recombination at or close to the p/i interface plays a significant role in the dark forward current. We show that Bardeen’s model for a modified Schottky-like interfacial junction can be satisfactorily applied to describe the reverse current–voltage characteristics at intermediate bias voltages.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Habibe Bayhan, Şadan Özden,