High speed turn-on reverse conducting 4 kV static induction thyristors based on the buried gate type p-base n-emitter soft contact structure and anti-parallel diodes for solid-state power supplies in high energy accelerators

Buried gate type p-base n-emitter soft contact (PNSC) structure 4 kV static induction thyristors (SIThys) have been fabricated in order to make thyristors for high-speed turn-on applications to such as high energy accelerators. It was found that these static induction thyristors could be fabricated under the test pilot line with a good device production yield. The static characteristics and pulse switching characteristics of these static induction thyristors are examined. Several application examples of the present 4 kV static induction thyristors to power supplies for high energy accelerators are shown.