Characteristics of InAIAs/InP and InAIP/GaAs native oxides

Characteristics of InAlAs/InP and InAlP/GaAs wet oxidation layers were measured for the first time. These oxidation layers can be a current blocking or an optical confining layer in laser diodes. These layers were well made at 500–575 °C. The oxidation rates at 525 °C are approximately 340 nm/h and 120 nm/h for InAlAs and InAlP oxides, respectively. The refractive index are 1.82–1.90 for InAlAs oxide and 1.565–1.595 for InAlP oxide between 0.6 μm and 1.65 μm wavelength. The characteristics are not much varied with processing temperatures except the oxidation rate. And a 200 nm thick InAlAs oxidation layer has a current–voltage characteristic that currents rapidly flow at about 10 V, which is much lower than that of SiO2.