Performance and physics of sub-50 nm strained Si on Si1−xGex-on-insulator (SGOI) nMOSFETs

Partially depleted floating body transistors on SGOI down to 30 nm gate length were fabricated and characterized. They demonstrate excellent static and RF performance. In particular, 40 nm gate length SGOI transistors exhibit a maximum oscillation frequency (fmax) estimated to be 150 GHz at VG = 0.4 V. The SGOI originality concerning the floating body effects, the RF characteristics and the short channel transport were in-depth studied in order to evaluate this architecture potentiality.