| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 747563 | Solid-State Electronics | 2006 | 6 Pages |
Abstract
In this paper, a detailed investigation of the mobility in two different strained-Si technologies has been conducted. The mobility gain due to strain is nearly lost in short channel devices. The short channel loss observed in both cases is attributed to a bigger contribution of Coulomb scattering and to a larger subband splitting due to pocket implants. Finally, the mobility gain reduction with temperature lowering has been quantitatively interpreted by a simple analytical model accounting for the fourfold valley depopulation and considering different scattering rates for the two first subbands.
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Authors
F. Lime, F. Andrieu, J. Derix, G. Ghibaudo, F. Boeuf, T. Skotnicki,