Optimization of ISBD embedded SiGe layers to prevent delamination process for MOSFET applications

An interaction between in situ boron doped SiGe layers deposited by low pressure chemical vapor deposition and NH3 plasma treatments was studied in this work. It is shown that NH3 plasma strips introduce H atoms into SiGe layer which further leads to unwanted blistering and exfoliation of the SiGe layer. The SiGe layers with varied boron profiles were examined in this work in order to understand influence of B doping on H accumulation. It is shown that B peak at SiGe/Si interface can be modulated by the temperature and pressure changes between the layers’ deposition. It was found that less H atoms diffuse into ISBD SiGe layer with higher B peak at Si cap/main SiGe layer. The SiGe layer with removed B peak at buffer/main SiGe layer interface and increased B peak at Si cap was proven to be delamination free and robust for HN3 plasma strips.