| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 747745 | Solid-State Electronics | 2014 | 5 Pages |
•We examine the post breakdown characteristics of metal gate/Al2O3/InGaAs.•It is observed resistive switching (RS) effect.•The oxide-substrate interface is studied by X-ray photoelectron spectroscopy spectra.•The low surface quality, in terms of its impact on the leakage current level, is responsible for the RS effect.
In this work, the influence of the oxide–semiconductor interface on the resistive switching phenomenon was studied in metal gates /Al2O3/InGaAs structures. Different sets of samples were manufactured to produce different qualities of oxide–semiconductor interfaces. The influence of the Al2O3/InGaAs interface on the resistive switching effect was studied by combining electrical characterizations with an analysis of the composition of the oxide/semiconductor interface. The results suggest that a low surface quality results in a decrease of the damage on the conductive filament responsible for the transitions between two resistive states.
