Room temperature analysis of Ge p+/n diodes reverse characteristics fabricated by platinum assisted dopant activation

This work examines the influence of the annealing time at 350 °C to the reverse current and capacitance characteristics of p+/n junction diodes fabricated by platinum assisted dopant activation. The reverse current and capacitance characteristics are first separated into bulk and peripheral components. The bulk or volume component is further analyzed in terms of diffusion and generation currents which constitute the physical components of the bulk reverse current. This allows the extraction of the generation and recombination lifetimes as well as the effective position of the energy levels of the generation–recombination centers. The results indicate that for the used active area geometry, the periphery and the bulk current components coexist in comparable magnitudes. Annealing for 10 min provides the lowest reverse current with the highest generation and recombination lifetimes. Higher annealing times deteriorate the diode due to the formation of defects within the depletion region which reduce the generation and recombination lifetimes.

Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Fabrication of p+/n Ge diodes by platinum assisted dopant activation at 350 °C with annealing time 0–30 min. ► Separation of the diode peripheral and bulk current and capacitance components in the reverse bias region. ► Determination of generation–recombination lifetimes and diffusion current of the diodes. ► Annealing for 10 min provides the lowest reverse current while the lifetimes acquire their highest values.