A new method for the extraction of flat-band voltage and doping concentration in Tri-gate Junctionless Transistors

A new method for the extraction of flat-band voltage (Vfb) and channel doping concentration (Nd) in Tri-gate Junctionless Transistors (JLTs) is presented. The new method, based on the relationship between the top-effective width (Wtop_eff) in accumulation and the effective width (Weff′) in partial depletion, enables the extraction of Vfb and Nd of JLT devices (here as ≈0.61 V and ≈6.4 × 1018 cm−3, respectively). The validity of the new method is also proved by 2D numerical simulations. Furthermore, it is emphasized that the sidewall accumulation current (Id_side) behavior of Tri-gate JLT devices is found to decrease dramatically near Vfb, allowing an estimation of the Vfb position of JLT devices.

► We report a new parameter extraction method for Junctionless Transistors (JLTs). ► Flat-band voltage (Vfb) of Tri-gate JLT devices was extracted by the new method. ► The new method also extracted the doping concentration (Nd) of Tri-gate JLT devices. ► The extracted values of Vfb and Nd are consistent to those from previous method. ► Sidewall current behavior of Tri-gate JLT devices also estimates the Vfb position.