Characterization and modeling of low frequency noise in CMOS inverters

A detailed characterization and modeling of the low frequency noise in a CMOS inverter is presented for the first time. A low frequency noise model for the load current and the output voltage is developed based on the carrier number fluctuations scheme. This model allows obtaining a consistent description of the noise characteristics of CMOS inverters issued from a 45 nm bulk CMOS technology. It should constitute a reliable theoretical framework for further analysis of the impact of time fluctuations on the static and dynamic operation of CMOS inverter based circuits.

► Detailed characterization of low frequency noise in a CMOS inverter. ► Low frequency noise model of load current and of output voltage based on the carrier number fluctuations scheme. ► Noise characteristics of CMOS inverters from a 45 nm bulk CMOS technology.