Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
747829 | Solid-State Electronics | 2015 | 6 Pages |
High electron concentration in 2DEG channel of AlInN/GaN devices is remarkably stable over a broad temperature range, enabling device operation above 500 °C. The developed IC technology is based on three key elements: (1) exceptional quality AlInN/GaN heterostructure with very high carrier concentration and mobility enables IC fast operation in a broad temperature range; (2) heterostructure field effect transistor approach t provides fully planar IC structure which is easy to scale and to combine with the other high temperature electronic components; (3) fabrication advancements including novel metallization scheme and high-K passivation/gate dielectrics enable high temperature operation. The feasibility of the developed technology was confirmed by fabrication and testing of the high temperature inverter and differential amplifier ICs using AlInN/GaN heterostructures. The developed ICs showed stable performance with unit-gain bandwidth above 1 MHz and internal response time 45 ns at temperatures as high as 500 °C.